Source: phys.orgScientists and engineers have been pushing for the past decade to leverage an elusive ferroelectric material called hafnium oxide, or hafnia, to usher in the next generation of computing memory. A team of researchers including the University of Rochester's Sobhit Singh published a study in the Proceedings of the National Academy of Sciences outlining progress toward making bulk ferroelectric and antiferroelectric hafnia available for use in a variety of applications.

Source: The Nation January 22, 2024 20:04 UTC