Local researchers make advanced MRAM device‘A BREAKTHROUGH’: TSRI Fabrication Service Division director Li Kai-shin said the key step forward in making the device entailed perpendicular magnetic anisotropyBy Lin Chia-nan / Staff reporterThe Taiwan Semiconductor Research Institute (TSRI) yesterday unveiled a new memory device it developed with university researchers, saying that they are the world’s second team after Intel to make the breakthrough. Magnetoresistive random access memory (MRAM) is widely regarded as having the potential to become a mainstream device, TSRI Fabrication Service Division director Li Kai-shin (李愷信) told a news conference in Taipei. To develop the device, global manufacturers have been working on various techniques, including spin-transfer-torque MRAM (STT-MRAM) and spin-orbit-torque MRAM (SOT-MRAM), although SOT-MRAM is still mostly in the research phase, he said. A next-generation memory device, developed by researchers from the Taiwan Semiconductor Research Institute, National Taiwan University, National Tsing Hua University and the Industrial Technology Research Institute, is pictured at a news conference at the Ministry of Science and Technology in Taipei yesterday. While Intel did not reveal the structural features of its device, the team clarified the physical mechanism involved in making the device, he added.

Source: Taipei Times November 10, 2021 02:36 UTC